Direct‑patterned thin‑film devices: the digital‑camera moment for electronics. No masks. No resists. No limits.
- Ferromagnetic insulators and ferromagnetic conductors — magnetic up to elevated temperatures
- Free of rare‑earth elements (REEs)
- Paramagnetic insulators
- Low‑permeability conductors
- High‑permeability conductors
- Optically transparent, electrically insulating magnetic thin films
- Resettable direct patterning enabled by unique material properties
- Growth on all major wafer platforms — providing resilience to global supply constraints
- Integrated modeling and experimentation — analytical and numerical solutions
- Validated direct‑patterning thin‑film device manufacturing
- Patented materials and processing technology
Optically transparent, electrically insulating, ferromagnetic thin‑film layers synthesized through our processing technology.
The subsidiary minima in the XRD pattern indicate exceptionally high crystalline quality.
Magnetization values exceed those of ferrimagnetic YIG, which is less versatile and significantly lower in magnetization. Even higher values are achievable through optimized synthesis, and coercive fields can be increased as needed.
We do not pursue evolutionary improvements to existing practice — we rethink the fundamentals of materials and device fabrication.
Validated Features
- Excellent reproducibility (see [Note 1])
- Semiconductor‑industry compatible — magnetic thin films and semiconductor processing can be combined, enabling direct on‑chip integration without surface mounting
- Mass‑production compatible — layers can be deposited using standard industrial technologies
- Electrical conductivity and magnetization can be precisely tuned — a key advantage for device manufacturing
- Functional at and above elevated temperatures
- Our materials enable mass‑production of electronic devices through room‑temperature, resettable direct‑patterning (see [Note 2])
-
The materials enable critically simplified patterning (see [Note 3]):
- No complex tools or film pre‑processing are required. In current lithography, the main challenges originate from the resist layer (photoresist, electron‑beam resist, resin).
Direct‑patterning tool constructed and validated through successful thin‑film device fabrication and testing
[Note 1] The technology is not based on phase‑change materials. We chose a fundamentally different approach to avoid known issues. Selecting the correct material‑design strategy from the outset is essential; a poor choice leads to poor reproducibility, limited device scaling, and time‑dependent properties.
[Note 2] Our patterning technology is far simpler than electron‑beam (EB) lithography, which is sometimes described as direct writing. EB lithography still requires a resist layer, suffers from the same limitations as photolithography, and is slow with low throughput. It is unsuitable for mass production. In contrast, our technology is scalable and the patterned film can be reset.
[Note 3] Nanoimprint lithography (NIL) is often described as revolutionary, but it remains complex for simple device fabrication. NIL shares the same fundamental issues as UV lithography due to the resin layer, and introduces additional reliability challenges. The mold—typically fabricated by EB lithography—contacts the resin directly, and the resulting pattern is not reversible. Etching is typically required. Although NIL is sometimes promoted as lower‑cost, additional steps such as electrode deposition or ion implantation are still needed. Resin layers increase complexity, cost, and defect rates. For complex circuits, NIL is unnecessarily complicated and error‑prone; better approaches exist.
Right-hand side flowchart: Re-writable direct-writing technology — a feasible, technologically better and cost‑effective alternative to the traditional route.
Without compromising the environment, our materials and processing technologies provide a path to more efficient and significantly smaller electronics.
- No need for toxic chemicals, rare earths, heavy metals, palladium, iron, or ultra‑pure water
Compatibility with Integrated Circuit Manufacturing Technology
Devices are created directly in our thin‑film layers, meaning the technology is not tied to any specific wafer material. At the same time, we maintain compatibility with major industrial platforms.
- Validated compatibility with key semiconductor materials (e.g., GaN, AlN, SiC, Si) enables seamless integration with today’s IC technologies
- High‑thermal‑conductivity and piezoelectric wafers (e.g., sapphire, LiNbO₃, LiTaO₃, quartz) are also supported
- Piezoelectric compatibility enables efficient use of magnetic films in MEMS devices
- Magnetic films are suitable for microwave components, magnetic field sensors, and magneto‑optic applications; low‑permeability conductors can also be fabricated
Miniaturization
Our thin films enable a validated direct‑patterning technology for wafer‑level devices. They can be patterned using standard lithography, but their real advantage is fast, precise, photoresist‑free direct writing.
- Laser processing, including UV lasers, is fully compatible
- As‑grown films strongly absorb at wavelengths λ < 300 nm
W = kλ / NA
- Shorter λ enables high resolution; strong UV absorption supports efficient patterning
The technology supports rapid, cost‑effective patterning of electrodes, resistors, capacitors, waveguides, isolators, circulators, phase shifters, and delay lines. Both high‑ and low‑permeability materials can be produced.
No expensive lithographic equipment, photoresists, etching, or toxic chemicals
The lithography ecosystem is dominated by a few large corporations, making traditional R&D expensive, slow, and irreversible. Our approach avoids this bottleneck entirely.
Our patterning process does not require:
- Photoresists, developers, etching, or fluorine gas
- Additional materials
- Ion implantation
- We create conductive and insulating regions more simply than any existing method
Traditional lithography chemistry is complex and costly; every wavelength change requires new tools, resists, and etching steps. Direct patterning is far simpler and drastically reduces energy consumption and manufacturing cost.
EMI Protection
High‑permeability materials allow in‑situ fabrication of EMI‑shielding layers directly on circuits.
- Single or multilayer shields with tunable conduction, permeability, and magnetization
- Low‑roughness oxide layers can be grown on top for additional device layers
- Preferred crystallographic orientation achievable through suitable processing
- Directly written conductors are naturally embedded, reducing EMI
Fast, feasible manufacturing without geopolitical constraints
Re‑writable (reusable) platforms benefit industries affected by chip shortages, including automotive and MMIC manufacturers.
- Thin‑film devices: can be manufactured and tested in‑situ at dramatically lower cost.
We enable distributed manufacturing — local chip design and production — in contrast to centralized foundries with long lead times and customer prioritization.
Chip shortage highlights the risks of centralized foundry production
Defying Rock’s Law
Rock’s law states that semiconductor fab costs double every four years. Our thin‑film platform breaks this trend by enabling low‑cost, high‑volume manufacturing and rapid prototyping of micro‑ and nanoscale devices.
This is achieved through materials that can be patterned without photoresists, developers, etching, or expensive instrumentation.